Technique for forming copper-containing lines embedded in a low-k dielectric by providing a stiffening layer

By providing a stiffening layer at three sidewalls of a trench to be filled with a copper-containing metal, the reduced thermomechanical confinement of a low-k material may be compensated for, at least to a certain degree, thereby reducing electromigration effects and hence increasing lifetime of so...

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Bibliographic Details
Main Authors KOSCHINSKY FRANK, HUEBLER PETER, FEUSTEL FRANK
Format Patent
LanguageEnglish
Published 30.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:By providing a stiffening layer at three sidewalls of a trench to be filled with a copper-containing metal, the reduced thermomechanical confinement of a low-k material may be compensated for, at least to a certain degree, thereby reducing electromigration effects and hence increasing lifetime of sophisticated semiconductor devices having metallization layers including low-k dielectric materials in combination with copper-based metal lines.
Bibliography:Application Number: US20050295756