Semiconductor device and method for fabricating the same

• Main Authors: MIYATA SATOE, MIZOKUCHI SHUJI
• Format: Patent
• Language: English
• Published: 20.07.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

After forming a first semiconductor region of a first conductivity type in a semiconductor substrate, a trench reaching a given portion of the first semiconductor region is formed in the semiconductor substrate. Then, after forming a gate insulating film on an inner wall of the trench, a second semiconductor region of a second conductivity type is formed on the first semiconductor region in the semiconductor substrate, and thereafter, a third semiconductor region of the first conductivity type is formed on the second semiconductor region in the semiconductor substrate. Also, a gate electrode of the first conductivity type is formed on the gate insulating film within the trench. The gate electrode is formed on the gate insulating film so as to extend over the second semiconductor region, a portion of the first semiconductor region disposed below the second semiconductor region and a portion of the third semiconductor region disposed on the second semiconductor region.