Silicon nitride from aminosilane using PECVD

• Main Authors: HOCHBERG ARTHUR K, CUTHILL KIRK S
• Format: Patent
• Language: English
• Published: 02.03.2006
• Subjects: ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS

A process for the plasma enhanced chemical vapor deposition of silicon nitride films from nitrogen, argon, xenon, helium or ammonia and an aminosilane, preferably of the formula: (t-C4H9NH)2SiH2 that provides improved properties, particularly etch resistance and low hydrogen concentrations as well a...