Nitride-based compound semiconductor light emitting device
A nitride-based compound semiconductor light emitting device has a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also has a nitride-based compound semiconductor layer provided on the...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
02.03.2006
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A nitride-based compound semiconductor light emitting device has a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also has a nitride-based compound semiconductor layer provided on the second ohmic electrode. A surface of the second ohmic electrode is exposed. |
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| AbstractList | A nitride-based compound semiconductor light emitting device has a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also has a nitride-based compound semiconductor layer provided on the second ohmic electrode. A surface of the second ohmic electrode is exposed. |
| Author | HATA TOSHIO |
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| Notes | Application Number: US20050216547 |
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| Snippet | A nitride-based compound semiconductor light emitting device has a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Nitride-based compound semiconductor light emitting device |
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