Method for fabricating a trench capacitor with an insulation collar which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell

The present invention provides a method for fabricating a trench capacitor with an insulation collar ( 10 ) in a substrate ( 1 ), which is electrically connected to the substrate ( 1 ) on one side via a buried contact, having the steps of: providing a trench ( 5 ) in the substrate ( 1 ) using a hard...

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Bibliographic Details
Main Author KUDELKA STEPHAN
Format Patent
LanguageEnglish
Published 05.01.2006
Subjects
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