Method for fabricating a trench capacitor with an insulation collar which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cell
The present invention provides a method for fabricating a trench capacitor with an insulation collar ( 10 ) in a substrate ( 1 ), which is electrically connected to the substrate ( 1 ) on one side via a buried contact, having the steps of: providing a trench ( 5 ) in the substrate ( 1 ) using a hard...
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Main Author | |
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Format | Patent |
Language | English |
Published |
05.01.2006
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Subjects | |
Online Access | Get full text |
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