Semiconductor device and its manufacturing method

• Main Authors: KOH RISHO, SAITO YUKISHIGE, RI JYONU, TAKEMURA HISASHI
• Format: Patent
• Language: English
• Published: 14.07.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a first insulating layer, a semiconductor layer formed on the first insulating layer, a second insulating layer on a part of the semiconductor layer, and a gate electrode formed on the semiconductor layer through the second insulating layer. The semiconductor layer in...