Methods of manufacturing a stressed MOS transistor structure

• Main Authors: SHAHEED M. R, AUTH CHRISTOPHER P, ARMSTRONG MARK, HOFFMANN THOMAS
• Format: Patent
• Language: English
• Published: 19.05.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.