Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates

A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profi...

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Bibliographic Details
Main Authors ELYAAKOUBI MUSTAPHA, SCHMITT JACQUES, IRZYK MICHAEL, SANONNENS LAURENT
Format Patent
LanguageEnglish
Published 31.03.2005
Edition7
Subjects
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Summary:A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
Bibliography:Application Number: US20040935779