Process for making silicon wafers with stabilized oxygen precipitate nucleation centers

• Main Authors: MULE'STAGNO LUCIANO, LIBBERT JEFFREY L, BANAN MOHSEN, KULKARNI MILIND, PHILLIPS RICHARD J, BRUNKHORST STEPHEN J
• Format: Patent
• Language: English
• Published: 03.03.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitroge...