Magnetic memory device having a plurality of magneto-resistance effect elements arranged in a matrix form and method for manufacturing the same

A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance e...

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Bibliographic Details
Main Author FUKUZUMI YOSHIAKI
Format Patent
LanguageEnglish
Published 24.02.2005
Edition7
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance effect element as major and minor axes thereof and a pitch between the adjacent magneto-resistance effect elements in a direction of the major axis is longer than that in a direction of the minor axis.
Bibliography:Application Number: US20040771548