Thermoelectric device having P-type and N-type materials

• Main Authors: MOCZYGEMBA JOSHUA E, BIERSCHENK JAMES L, SHARP JEFFREY W
• Format: Patent
• Language: English
• Published: 30.12.2004
• Edition: 7
• Subjects: ELECTRICITY

A method of forming a thermoelectric device includes extruding a P/N-type billet to form a P/N-type extrusion having a first plurality of P-type regions and a first plurality of N-type regions. The P/N-type extrusion is sliced into a plurality of P/N-type wafers. A diffusion barrier metallization is...