Film thichness measuring monitor wafer

The object of the present invention is to provide a wafer having a structure of enabling an SiC wafer to be put to practical use as a wafer for monitoring a film thickness. For this purpose, an average surface roughness Ra of at least one surface of the SiC wafer is set to be substantially equivalen...

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Bibliographic Details
Main Authors SAITO MAKOTO, FUJITA FUSAO, EBATA MAKOTO
Format Patent
LanguageEnglish
Published 08.04.2004
Edition7
Subjects
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