METHOD OF ANGLE IMPLANT TO IMPROVE TRANSISTOR REVERSE NARROW WIDTH EFFECT

• Main Authors: LAI TOMMY MAU LAM, LIN YUNG TAO, LI WEINING
• Format: Patent
• Language: English
• Published: 30.10.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A new angle implant is provided that reduces or eliminates the effects of narrow channel impurity diffusion to surrounding regions of insulation. A layer of pad oxide is created over the surface of a silicon substrate, a layer of silicon nitride is deposited and patterned such that the layer of pad...