Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same

A single electron memory device including quantum dots between a gate electrode and a single electron storage element and a method for manufacturing the same, wherein the single electron memory device includes a substrate on which a nano-scale channel region is formed between a source and a drain, a...

Full description

Saved in:
Bibliographic Details
Main Authors RYU WON-IL, KIM BYONG-MAN, CHAE SOO-DOO, KIM MOON-KYUNG, CHAE HEE-SOON
Format Patent
LanguageEnglish
Published 14.11.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A single electron memory device including quantum dots between a gate electrode and a single electron storage element and a method for manufacturing the same, wherein the single electron memory device includes a substrate on which a nano-scale channel region is formed between a source and a drain, and a gate lamination pattern including quantum dots on the channel region. The gate lamination pattern includes a lower layer formed on the channel region, a single electron storage medium storing a single electron tunneling through the lower layer formed on the lower layer, an upper layer including quantum dots formed on the single electron storage medium, and a gate electrode formed on the upper layer to be in contact with the quantum dots.
Bibliography:Application Number: US20020125597