ETCHING GAS FOR SILICON ETCH BACK

An etching gas having a good chemical property for silicon etch back is made by mixing a SF6 gas with a Cl2 gas. With addition of an inert gas, good chamber conditions are maintained during silicon etch back, and the etching selectivity for silicon to an etching stop layer is improved.

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Main Authors TING MU-TSUN, LEE RAY, TSAI NIEN-YU, PANG TE-HSUN
Format Patent
LanguageEnglish
Published 06.06.2002
Edition7
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Abstract An etching gas having a good chemical property for silicon etch back is made by mixing a SF6 gas with a Cl2 gas. With addition of an inert gas, good chamber conditions are maintained during silicon etch back, and the etching selectivity for silicon to an etching stop layer is improved.
AbstractList An etching gas having a good chemical property for silicon etch back is made by mixing a SF6 gas with a Cl2 gas. With addition of an inert gas, good chamber conditions are maintained during silicon etch back, and the etching selectivity for silicon to an etching stop layer is improved.
Author PANG TE-HSUN
LEE RAY
TING MU-TSUN
TSAI NIEN-YU
Author_xml – fullname: TING MU-TSUN
– fullname: LEE RAY
– fullname: TSAI NIEN-YU
– fullname: PANG TE-HSUN
BookMark eNrjYmDJy89L5WRQdA1x9vD0c1dwdwxWcPMPUgj29PF09vdTAIkrODk6e_MwsKYl5hSn8kJpbgZlN5CkbmpBfnxqcUFicmpeakl8aLCRgYGRgZmZhYWJo6ExcaoAU8wkbA
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Edition 7
ExternalDocumentID US2002066884A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2002066884A13
IEDL.DBID EVB
IngestDate Fri Jul 19 13:57:29 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2002066884A13
Notes Application Number: US19990396500
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020606&DB=EPODOC&CC=US&NR=2002066884A1
ParticipantIDs epo_espacenet_US2002066884A1
PublicationCentury 2000
PublicationDate 20020606
PublicationDateYYYYMMDD 2002-06-06
PublicationDate_xml – month: 06
  year: 2002
  text: 20020606
  day: 06
PublicationDecade 2000
PublicationYear 2002
RelatedCompanies PANG TE-HSUN
LEE RAY
TING MU-TSUN
TSAI NIEN-YU
RelatedCompanies_xml – name: PANG TE-HSUN
– name: TSAI NIEN-YU
– name: LEE RAY
– name: TING MU-TSUN
Score 2.552975
Snippet An etching gas having a good chemical property for silicon etch back is made by mixing a SF6 gas with a Cl2 gas. With addition of an inert gas, good chamber...
SourceID epo
SourceType Open Access Repository
SubjectTerms ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
Title ETCHING GAS FOR SILICON ETCH BACK
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020606&DB=EPODOC&locale=&CC=US&NR=2002066884A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-LHlIjSt2Jrs348FGnTVqeuHXaVvY02zUCQOVzFf99LaXVPe0tycPmAXy6_Sy4HcCPQ7hTCEWo-102VcsScQ3OhcqHl3HKskhoyUHgUm48ZfZoOph34aGNh6n9Cf-rPERFRHPFe1fv18t-JFdRvK1e3xTs2fd5HEzdQWnZ8p-GBXAl8NxwnQcIUxtwsVeLXRmbaNvWQK23hQdqSeAjffBmXslw3KtE-bI9R36I6gI5Y9GCXtbnXerAzaq68sdigb3UIV-GESe8SefBSguyNpMOXIUtiItuJ77HnI7iOZEXFvmZ_U5tl6frAjGPoIukXJ0DKghp2WWqOIZBTUOFQXRM6L22b0zkf0FPob9J0tll8Dnt1VhPpTTD70K2-vsUFGtequKzX5BfVhnj6
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8QNOKbosYP1BnN3hY3VvbxQAx0IMg-iNsMb2TrSmJikMiM_77XZihPvLW95PqR_Hr9XXs9gAeOdifnLteyhWFphCHmXJJxjXE9Y7ZrF8QUgcJBaI1S8jLrzGrwsYmFkf-E_sjPERFRDPFeyv169e_E8uTbyvVj_o5Nn0_DpOupG3bc1vFArnr97mAaeRFVKe2msRq-VjLLcUgPudIeHrJtgYfBW1_Epay2jcrwCPanqG9ZHkONL5vQoJvca004CKorbyxW6FufwN0gocK7pDz3YgXZmxKP_TGNQkW0K_0enZzC_VBUNOxr_je1eRpvD8w8gzqSfn4OSpET0ykK3TU5cgrCXWLo3GCF4zCyYB1yAa1dmi53i2-hMUoCf-6Pw8kVHMoMJ8KzYLWgXn5982s0tGV-I9fnF6zae-0
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=ETCHING+GAS+FOR+SILICON+ETCH+BACK&rft.inventor=TING+MU-TSUN&rft.inventor=LEE+RAY&rft.inventor=TSAI+NIEN-YU&rft.inventor=PANG+TE-HSUN&rft.date=2002-06-06&rft.externalDBID=A1&rft.externalDocID=US2002066884A1