Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers
Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
29.10.2024
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Subjects | |
Online Access | Get full text |
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