Semiconductor device including deep trench capacitors and via contacts
A semiconductor device and a method of manufacturing the semiconductor device are disclosed. In one aspect, the semiconductor device includes a plurality of deep trench capacitors and a plurality of via contacts that at least partially surround the deep trench capacitors. Variations may be made to t...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
27.08.2024
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Subjects | |
Online Access | Get full text |
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