Thin film anisotropic magnetoresistor device and formation

Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and...

Full description

Saved in:
Bibliographic Details
Main Authors Brannon, Christopher Eric, French, William David, Lee, Dok Won, Wang, Fuchao
Format Patent
LanguageEnglish
Published 20.08.2024
Subjects
Online AccessGet full text

Cover

Loading…