Thin film anisotropic magnetoresistor device and formation
Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
20.08.2024
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Subjects | |
Online Access | Get full text |
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