Semiconductor device and method of monitoring a temperature thereof
A semiconductor device includes a temperature-independent current generator that generates a reference current substantially independent of temperature and a mirror current that is a substantial duplicate of the reference current, a pulse signal generator that samples the mirror current so as to gen...
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| Main Authors | , , , , , |
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| Format | Patent |
| Language | English |
| Published |
20.08.2024
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor device includes a temperature-independent current generator that generates a reference current substantially independent of temperature and a mirror current that is a substantial duplicate of the reference current, a pulse signal generator that samples the mirror current so as to generate a pulse signal, and a counter that obtains a number of pulse signals generated by the pulse signal generator, that permits the pulse signal generator to generate a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is less than a predetermined threshold value, and that inhibits the pulse signal generator from generating a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is equal to the predetermined threshold value. A method for monitoring a temperature of the semiconductor device is also disclosed. |
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| AbstractList | A semiconductor device includes a temperature-independent current generator that generates a reference current substantially independent of temperature and a mirror current that is a substantial duplicate of the reference current, a pulse signal generator that samples the mirror current so as to generate a pulse signal, and a counter that obtains a number of pulse signals generated by the pulse signal generator, that permits the pulse signal generator to generate a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is less than a predetermined threshold value, and that inhibits the pulse signal generator from generating a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is equal to the predetermined threshold value. A method for monitoring a temperature of the semiconductor device is also disclosed. |
| Author | Peng, Yung-Chow Chang, Chin-Ho Chen, Yi-Wen Liu, Szu-Lin Lien, Bei-Shing Horng, Jaw-Juinn |
| Author_xml | – fullname: Chen, Yi-Wen – fullname: Lien, Bei-Shing – fullname: Horng, Jaw-Juinn – fullname: Peng, Yung-Chow – fullname: Liu, Szu-Lin – fullname: Chang, Chin-Ho |
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| Notes | Application Number: US202217718456 |
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| RelatedCompanies | Taiwan Semiconductor Manufacturing Company, Ltd |
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| Snippet | A semiconductor device includes a temperature-independent current generator that generates a reference current substantially independent of temperature and a... |
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| SubjectTerms | AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE |
| Title | Semiconductor device and method of monitoring a temperature thereof |
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