Semiconductor device and method of forming vertical structure
According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidat...
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Format | Patent |
Language | English |
Published |
13.08.2024
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Subjects | |
Online Access | Get full text |
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Abstract | According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure. |
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AbstractList | According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure. |
Author | Lan, Wen-Ting Yang, Kai-Chieh Wang, Chih-Hao Lien, Wai-Yi Ju, Shi-Ning |
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RelatedCompanies | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
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Snippet | According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor device and method of forming vertical structure |
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