Flowable film curing using H2 plasma
Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydr...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
06.08.2024
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Subjects | |
Online Access | Get full text |
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