Semiconductor device and manufacturing method thereof

A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer....

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Bibliographic Details
Main Authors Takeuchi, Masakatsu, Fukumaki, Naomi, Sato, Misuzu, Wakatsuki, Satoshi, Iino, Tomohisa
Format Patent
LanguageEnglish
Published 16.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.
Bibliography:Application Number: US202117495417