Wafer-bonding structure and method of forming thereof

A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a...

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Bibliographic Details
Main Authors Wang, Yu-Ting, Wang, Hsingya Arthur, Chou, Sheng-Yuan, Chang, Wan-Yi
Format Patent
LanguageEnglish
Published 25.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.
Bibliography:Application Number: US202117488503