1D vertical edge blocking (VEB) via and plug

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment a semiconductor device comprises a first interlayer dielectric (ILD), a plurality of source/drain (S/D) contacts in the first ILD, a plurality of gate contacts in the first ILD, wherein t...

Full description

Saved in:
Bibliographic Details
Main Authors Harper, Michael, Sivakumar, Swaminathan, Rich, Suzanne S, Nyhus, Paul, Schenker, Richard E, Haran, Mohit K, Guler, Leonard P, Ward, Curtis, Patel, Reken, Wallace, Charles H
Format Patent
LanguageEnglish
Published 30.04.2024
Subjects
Online AccessGet full text

Cover

Loading…