1D vertical edge blocking (VEB) via and plug
Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment a semiconductor device comprises a first interlayer dielectric (ILD), a plurality of source/drain (S/D) contacts in the first ILD, a plurality of gate contacts in the first ILD, wherein t...
Saved in:
Main Authors | , , , , , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
30.04.2024
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!