Data storage cell, memory, and memory fabrication method thereof

The invention discloses a memory fabrication method. The memory fabrication method includes forming a plurality of gate electrode lines to respectively form a plurality of gates of a plurality of data storage cells, and forming a plurality of conductive lines. The plurality of data storage cells are...

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Bibliographic Details
Main Authors Lee, Kuo-Hsing, Hsueh, Sheng-Yuan
Format Patent
LanguageEnglish
Published 09.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a memory fabrication method. The memory fabrication method includes forming a plurality of gate electrode lines to respectively form a plurality of gates of a plurality of data storage cells, and forming a plurality of conductive lines. The plurality of data storage cells are arranged in an array. Each of the plurality of conductive lines is coupled to two of the plurality of gate electrode lines. Each of the plurality of conductive lines at least partially overlaps the two gate electrode lines of the plurality of gate electrode lines.
Bibliography:Application Number: US202017074584