Type III-V semiconductor substrate with monolithically integrated capacitor

A semiconductor die includes a barrier layer of type III-V semiconductor material, a channel layer of type III-V semiconductor material disposed below the barrier layer, the channel layer forming a heterojunction with the barrier layer such that a two-dimensional charge carrier gas is disposed in th...

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Bibliographic Details
Main Authors Imam, Mohamed, Kim, Hyeongnam
Format Patent
LanguageEnglish
Published 27.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor die includes a barrier layer of type III-V semiconductor material, a channel layer of type III-V semiconductor material disposed below the barrier layer, the channel layer forming a heterojunction with the barrier layer such that a two-dimensional charge carrier gas is disposed in the channel layer near the heterojunction, and a capacitor monolithically formed in the semiconductor die, wherein a dielectric medium of the capacitor includes a first section of the barrier layer.
Bibliography:Application Number: US202217977875