Perpendicular MTJ element having a cube-textured reference layer and methods of making the same

The invention comprises a method of forming a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of CoFe BCC (10...

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Bibliographic Details
Main Authors Guo, Yimin, Xiao, Rongfu, Chen, Jun
Format Patent
LanguageEnglish
Published 20.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
STATIC STORES
TRANSFORMERS
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Summary:The invention comprises a method of forming a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of CoFe BCC (100)/MgO rocksalt (100)/CoFe BCC (100). Correspondingly, a high MR ratio and a high pinning strength on the reference layer can be achieved for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.
Bibliography:Application Number: US202117373757