Semiconductor devices including stack oxide materials having different densities or different oxide portions, and semiconductor devices including stack dielectric materials having different portions

Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extendin...

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Bibliographic Details
Main Authors Simsek-Ege, Fatma Arzum, Aella, Pavan Kumar Reddy, Jayanti, Srikant
Format Patent
LanguageEnglish
Published 30.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.
Bibliography:Application Number: US202117366471