Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction

In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first...

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Bibliographic Details
Main Authors Rioult, Maxime, Lassalle-Balier, Rémy
Format Patent
LanguageEnglish
Published 26.12.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.
Bibliography:Application Number: US202318175829