FeRAM with laminated ferroelectric film and method forming same

• Main Authors: Trinh, Hai-Dang, Lin, Hsing-Lien, Lee, Bi-Shen, Wei, Yi Yang, Kuang, Hsun-Chung, Tsai, Cheng-Yuan
• Format: Patent
• Language: English
• Published: 12.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes forming a bottom electrode layer, and depositing a first ferroelectric layer over the bottom electrode layer. The first ferroelectric layer is amorphous. A second ferroelectric layer is deposited over the first ferroelectric layer, and the second ferroelectric layer has a polycryst...