Interlayer dielectric layer
The present disclosure describes a method for forming a silicon-based, carbon-rich, low-k ILD layer with a carbon concentration between about 15 atomic % and about 20 atomic %. For example, the method includes depositing a dielectric layer, over a substrate, with a dielectric material having a diele...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
05.09.2023
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The present disclosure describes a method for forming a silicon-based, carbon-rich, low-k ILD layer with a carbon concentration between about 15 atomic % and about 20 atomic %. For example, the method includes depositing a dielectric layer, over a substrate, with a dielectric material having a dielectric constant below 3.9 and a carbon atomic concentration between about 15% and about 20%; exposing the dielectric layer to a thermal process configured to outgas the dielectric material; etching the dielectric layer to form openings; and filling the openings with a conductive material to form conductive structures. |
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| AbstractList | The present disclosure describes a method for forming a silicon-based, carbon-rich, low-k ILD layer with a carbon concentration between about 15 atomic % and about 20 atomic %. For example, the method includes depositing a dielectric layer, over a substrate, with a dielectric material having a dielectric constant below 3.9 and a carbon atomic concentration between about 15% and about 20%; exposing the dielectric layer to a thermal process configured to outgas the dielectric material; etching the dielectric layer to form openings; and filling the openings with a conductive material to form conductive structures. |
| Author | Shen, Bo-Jhih Liou, Joung-Wei Chiu, Yi-Wei |
| Author_xml | – fullname: Liou, Joung-Wei – fullname: Shen, Bo-Jhih – fullname: Chiu, Yi-Wei |
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| Notes | Application Number: US201816138106 |
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| RelatedCompanies | Taiwan Semiconductor Manufacturing Co., Ltd |
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| Snippet | The present disclosure describes a method for forming a silicon-based, carbon-rich, low-k ILD layer with a carbon concentration between about 15 atomic % and... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Interlayer dielectric layer |
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