Chalcogenide material, variable resistance memory device and electronic device

• Main Authors: Zang, Hwan Jun, Ban, Sang Hyun, Hwang, Uk, Lee, Jong Ho, Cho, Sung Lae, Ahn, Jun Ku, Lee, Beom Seok, Lee, Young Ho, Lee, Woo Tae, Cho, Ye Cheon, Jung, Gwang Sun
• Format: Patent
• Language: English
• Published: 18.07.2023
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 13 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 13 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 13 element.