Semiconductor device with reduced flicker noise

• Main Authors: Cheng, Hsin-Li, Kuo, Liang-Tai, Chang, Yu-Chi
• Format: Patent
• Language: English
• Published: 27.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In some embodiments, a semiconductor device is provided. The semiconductor device includes a source region and a drain region arranged in a semiconductor substrate, where the source region is laterally separated from the drain region. A gate stack is arranged over the semiconductor substrate and between the source region and the drain region. A cap layer is arranged over the gate stack, where a bottom surface of the cap layer contacts a top surface of the gate stack. Sidewall spacers are arranged along sides of the gate stack and the cap layer. A resist protective oxide (RPO) layer is disposed over the cap layer, where the RPO layer extends along sides of the sidewalls spacers to the semiconductor substrate. A contact etch stop layer is arranged over the RPO layer, the source region, and the drain region.