Three-dimensional memory device including discrete charge storage elements and methods of forming the same
An alternating stack of disposable material layers and silicon nitride layers is formed over a substrate. Memory openings are formed through the alternating stack, and memory opening fill structures are formed in the memory openings, wherein each of the memory opening fill structures comprises a cha...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
23.05.2023
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Subjects | |
Online Access | Get full text |
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