Three-dimensional memory device including discrete charge storage elements and methods of forming the same

• Main Authors: Kasai, Yuki, Asano, Tomohiro, Inoue, Shigehisa, Makala, Raghuveer S
• Format: Patent
• Language: English
• Published: 23.05.2023
• Subjects: ELECTRICITY

An alternating stack of disposable material layers and silicon nitride layers is formed over a substrate. Memory openings are formed through the alternating stack, and memory opening fill structures are formed in the memory openings, wherein each of the memory opening fill structures comprises a cha...