Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate
A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm and an isolation region that impedes the trans...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
21.02.2023
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Subjects | |
Online Access | Get full text |
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