Silicon carbonitride gapfill with tunable carbon content

• Main Authors: Tannos, Jethro, Nemani, Srinivas D, Citla, Bhargav S, Shek, Mei-Yee, Rubnitz, Joshua, Yieh, Ellie Y, Ying, Chentsau Chris
• Format: Patent
• Language: English
• Published: 31.01.2023
• Subjects: ADHESIVES; CHEMICAL PAINT OR INK REMOVERS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; CORRECTING FLUIDS; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; FILLING PASTES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INKS; INORGANIC CHEMISTRY; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-METALLIC ELEMENTS; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; POLISHES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; USE OF MATERIALS THEREFOR; WOODSTAINS

Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II)wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.