Negative tone photoresist for EUV lithography
A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a tota...
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Format | Patent |
Language | English |
Published |
10.01.2023
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Online Access | Get full text |
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Abstract | A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a total weight of the negative tone photoresist. |
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AbstractList | A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a total weight of the negative tone photoresist. |
Author | Chang, Ching-Yu Yang, Li-Po Lai, Wei-Han |
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Snippet | A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a... |
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SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
Title | Negative tone photoresist for EUV lithography |
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