Resistive memory device and methods of making such a resistive memory device

An illustrative device disclosed herein includes a bottom electrode, a conformal switching layer positioned above the bottom electrode and a top electrode positioned above the conformal switching layer. The top electrode includes a conformal layer of conductive material positioned above the conforma...

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Bibliographic Details
Main Authors Hsieh, Curtis Chun-I, Yi, Wanbing, Lim, Cing Gie, Tan, Juan Boon, Lin, Benfu, Hsu, Wei-Hui
Format Patent
LanguageEnglish
Published 06.12.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An illustrative device disclosed herein includes a bottom electrode, a conformal switching layer positioned above the bottom electrode and a top electrode positioned above the conformal switching layer. The top electrode includes a conformal layer of conductive material positioned above the conformal switching layer and a conductive material positioned above the conformal layer of conductive material.
Bibliography:Application Number: US202016945058