Method of manufacturing a metal-oxide-semiconductor field-effect transistor (MOSFET) having low off-state capacitance due to reduction of off-state capacitance of back-end-of-line (BEOL) features of the MOSFET

• Main Authors: Tsai, Tsung-Han, Singh, Gulbagh, Chuang, Kun-Tsang, Hsu, Shih-Lu
• Format: Patent
• Language: English
• Published: 18.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device may include a source on a first side of a gate. The semiconductor device may include a drain on a second side of the gate, where the second side of the gate is opposite to the first side of the gate. The semiconductor device may include a first contact over the source. The semiconductor device may include a second contact over the drain. The semiconductor device may include an air gap over the gate between at least the first contact and the second contact. The semiconductor device may include at least two dielectric materials in each of a region between the air gap and the first contact and a region between the air gap and the second contact.