Field-to-field corrections using overlay targets

• Main Authors: Tarshish-Shapir, Inna, Dov, Guy Ben, Shaphirov, Diana, Leshinsky-Altshuller, Enna, Ghinovker, Mark, Volkovich, Roie, Steely, Chris
• Format: Patent
• Language: English
• Published: 11.10.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.