RDSON/dRON measurement method and circuit for high voltage HEMTs

A test system, a method for manufacturing an electronic device, and a method for testing a wafer or electronic device that includes coupling a transistor in a series circuit with a capacitor and a resistor, coupling a voltage source to the capacitor to charge the capacitor to a non-zero DC voltage w...

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Bibliographic Details
Main Authors Tadepalli, Ramana, Smith, Alexander George Atkins
Format Patent
LanguageEnglish
Published 20.09.2022
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:A test system, a method for manufacturing an electronic device, and a method for testing a wafer or electronic device that includes coupling a transistor in a series circuit with a capacitor and a resistor, coupling a voltage source to the capacitor to charge the capacitor to a non-zero DC voltage while the transistor is turned off, disconnecting the voltage source from the capacitor while the transistor is turned off, turning the transistor on while the voltage source is disconnected from the capacitor, measuring a voltage signal across the resistor while the transistor is turned on, and determining a test result indicating whether the transistor has an acceptable dynamic on-state resistance according to the voltage signal across the resistor.
Bibliography:Application Number: US202017023723