Near-infrared photodetector semiconductor device
The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
17.05.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity. |
---|---|
Bibliography: | Application Number: US201816763894 |