Bottom-up approach to high aspect ratio hole formation in 3D memory structures
Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars...
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| Main Authors | , , , |
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| Format | Patent |
| Language | English |
| Published |
26.04.2022
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features. |
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| AbstractList | Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features. |
| Author | Gopalraja, Praburam Mallick, Abhijit Basu Gandikota, Srinivas Roy, Susmit Singha |
| Author_xml | – fullname: Roy, Susmit Singha – fullname: Mallick, Abhijit Basu – fullname: Gopalraja, Praburam – fullname: Gandikota, Srinivas |
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| Notes | Application Number: US201816643965 |
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| Snippet | Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Bottom-up approach to high aspect ratio hole formation in 3D memory structures |
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