Semiconductor device
Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semi...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
18.01.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges from 0.01:1.0 to 0.8:1.0. |
---|---|
AbstractList | Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges from 0.01:1.0 to 0.8:1.0. |
Author | Kim, Byeoung Jo Choi, Rak Jun |
Author_xml | – fullname: Kim, Byeoung Jo – fullname: Choi, Rak Jun |
BookMark | eNrjYmDJy89L5WQQCU7NzUzOz0spTS7JL1JISS3LTE7lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhkZG5pbmxk5GxsSoAQAqCSLc |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US11227973B2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US11227973B23 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:04:10 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US11227973B23 |
Notes | Application Number: US201816766172 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220118&DB=EPODOC&CC=US&NR=11227973B2 |
ParticipantIDs | epo_espacenet_US11227973B2 |
PublicationCentury | 2000 |
PublicationDate | 20220118 |
PublicationDateYYYYMMDD | 2022-01-18 |
PublicationDate_xml | – month: 01 year: 2022 text: 20220118 day: 18 |
PublicationDecade | 2020 |
PublicationYear | 2022 |
RelatedCompanies | SUZHOU LEKIN SEMICONDUCTOR CO., LTD |
RelatedCompanies_xml | – name: SUZHOU LEKIN SEMICONDUCTOR CO., LTD |
Score | 3.3829381 |
Snippet | Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor device |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220118&DB=EPODOC&locale=&CC=US&NR=11227973B2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTU2NzZLBK0LA7aldU2SzdJ0kwyMUnRTjE1TkpOTTcyTwNcB-fqZeYSaeEWYRjAxZMH2woDPCS0HH44IzFHJwPxeAi6vCxCDWC7gtZXF-kmZQKF8e7cQWxc1aO_YCFSdWai5ONm6Bvi7-DurOTvbhgar-QXZApsVRuaW5sZOwOKaFdSMBp2z7xrmBNqVUoBcpbgJMrAFAE3LKxFiYErNE2bgdIbdvCbMwOELnfAGMqF5r1iEQSQYtI49Pw90QGt-kUJKKiiPizIourmGOHvoAo2Ph_slPjQY4RJjMQYWYB8_VYJBwTI1NQkUMpZJhsYmxhZpFimgc-lSDSwtEoHY1FKSQQq3OVL4JKUZuEDhAho1MLSQYWApKSpNlQXWoyVJcuAAAAA3QHXM |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTU2NzZLBK0LA7aldU2SzdJ0kwyMUnRTjE1TkpOTTcyTwNcB-fqZeYSaeEWYRjAxZMH2woDPCS0HH44IzFHJwPxeAi6vCxCDWC7gtZXF-kmZQKF8e7cQWxc1aO_YCFSdWai5ONm6Bvi7-DurOTvbhgar-QXZApsVRuaW5sZOwOKa1RzYJQR3lcKcQLtSCpCrFDdBBrYAoGl5JUIMTKl5wgyczrCb14QZOHyhE95AJjTvFYswiASD1rHn54EOaM0vUkhJBeVxUQZFN9cQZw9doPHxcL_EhwYjXGIsxsAC7OOnSjAoWKamJoFCxjLJ0NjE2CLNIgV0Ll2qgaVFIhCbWkoySOE2RwqfpDwDp0eIr0-8j6eftzQDFyiMQCMIhhYyDCwlRaWpssA6tSRJDhwYAN33eLY |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device&rft.inventor=Kim%2C+Byeoung+Jo&rft.inventor=Choi%2C+Rak+Jun&rft.date=2022-01-18&rft.externalDBID=B2&rft.externalDocID=US11227973B2 |