Power module having at least one power semiconductor

A power module includes a substrate having a first layer and a second layer which are connected to one another and arranged above one another. The first layer includes a first dielectric material having a metallization arranged on a side facing the second layer and the second layer includes a second...

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Bibliographic Details
Main Author Pfefferlein, Stefan
Format Patent
LanguageEnglish
Published 06.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
PRINTED CIRCUITS
SEMICONDUCTOR DEVICES
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Summary:A power module includes a substrate having a first layer and a second layer which are connected to one another and arranged above one another. The first layer includes a first dielectric material having a metallization arranged on a side facing the second layer and the second layer includes a second dielectric material having a metallization arranged on a side facing away from the metallization of the first dielectric material. A power semiconductor having a first contact area and a second contact area opposite the first contact area is connected to the metallization of the first dielectric material via the first contact area and arranged in a first recess of the second layer. A metallic first encapsulation encapsulates the power semiconductor in a fluid-tight manner, with the second contact area of the power semiconductor being electrically conductively connected to the metallization of the second dielectric material via the first encapsulation.
Bibliography:Application Number: US201816635882