Ferroelectric memory cell access

Methods, systems, and devices for accessing a ferroelectric memory cell are described. In some examples, during a first portion of an access procedure, the voltages of a digit line and word line coupled with the memory cell may be increased while the voltage of a plate coupled with the memory cell i...

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Bibliographic Details
Main Author Di Vincenzo, Umberto
Format Patent
LanguageEnglish
Published 25.05.2021
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Methods, systems, and devices for accessing a ferroelectric memory cell are described. In some examples, during a first portion of an access procedure, the voltages of a digit line and word line coupled with the memory cell may be increased while the voltage of a plate coupled with the memory cell is held constant, which may support sensing a logic state stored by the memory cell prior the access procedure, and which may result in a first logic state being written to the memory cell. A voltage of the plate may then be increased, and the digit line may then be coupled with the plate. Because the first logic state was previously written to the memory cell, a target logic state may not need to be subsequently written to the memory cell unless different than the first logic state.
Bibliography:Application Number: US201916511423