Adjusting read voltage level in rewritable nonvolatile memory module

A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: reading a first physical unit based on a first read voltage level to obtain first data; reading the first physical unit based on a second read...

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Bibliographic Details
Main Authors Chen, Szu-Wei, Lin, Wei, Liu, An-Cheng, Yang, Yu-Siang
Format Patent
LanguageEnglish
Published 20.04.2021
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: reading a first physical unit based on a first read voltage level to obtain first data; reading the first physical unit based on a second read voltage level to obtain second data; reading the first physical unit based on a third read voltage level to obtain third data; obtaining a first reference value which reflects a data variation status between the first data and the second data; obtaining a second reference value which reflects a data variation status between the first data and the third data; reading the first physical unit based on a fourth read voltage level to obtain fourth data according to the first reference value and the second reference value; and decoding the fourth data by a decoding circuit.
Bibliography:Application Number: US201916292338