BAW resonators with antisymmetric thick electrodes

A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial m...

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Main Authors Kim, Dae Ho, Bi, Zhiqiang, Winters, Mary
Format Patent
LanguageEnglish
Published 29.12.2020
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Abstract A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.
AbstractList A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.
Author Winters, Mary
Bi, Zhiqiang
Kim, Dae Ho
Author_xml – fullname: Kim, Dae Ho
– fullname: Bi, Zhiqiang
– fullname: Winters, Mary
BookMark eNrjYmDJy89L5WQwcnIMVyhKLc7PSyzJLypWKM8syVBIzCvJLK7MzU0tKcpMVijJyEzOVkjNSU0uKcpPSS3mYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBhbmlhbmRk5GxsSoAQDqCi5r
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US10879872B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US10879872B23
IEDL.DBID EVB
IngestDate Fri Jul 19 14:00:58 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US10879872B23
Notes Application Number: US201916389806
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201229&DB=EPODOC&CC=US&NR=10879872B2
ParticipantIDs epo_espacenet_US10879872B2
PublicationCentury 2000
PublicationDate 20201229
PublicationDateYYYYMMDD 2020-12-29
PublicationDate_xml – month: 12
  year: 2020
  text: 20201229
  day: 29
PublicationDecade 2020
PublicationYear 2020
RelatedCompanies Akoustis, Inc
RelatedCompanies_xml – name: Akoustis, Inc
Score 3.3024292
Snippet A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
Title BAW resonators with antisymmetric thick electrodes
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201229&DB=EPODOC&locale=&CC=US&NR=10879872B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1ZS8NAEB5KFfVNq6L1YAXJWzCmMcdDEHNRhB7YRvtWspsttNKkNBHx3zsTUuuLvi27sMewszPf7BwAt4m0bUE5W4WpdVQDgbLKHete7eB9MROBAjSleOde3-zGxvPkYdKAxSYWpsoT-lklR0SOEsjvZfVer7ZGrKDyrSzu-By78sdo7AZKjY51-ihylMBzw-EgGPiK77vxSOm_oK5rWwivdQ-f6x1Uoy3ihvDVo6iU1W-REh3C7hBny8ojaMisBfv-pvJaC_Z69Yc3NmveK45B957eGIJjMnfn64KRBZUhXebF13JJdbEEI9_1d1ZXtkllcQI3UTj2uyouPv056TQebffZOYVmlmfyDBh3UnPG8XAWN4zEljYXXHM4qjYIxzR9dg7tv-dp_zd4AQdENfLP0J1LaJbrD3mFUrbk1xV5vgEwjoEd
link.rule.ids 230,309,783,888,25576,76882
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT4NAEJ401VhvWjW2vjAx3IgIyONAjDwa1EIbC9obYWGbVFNoCsb4750l1HrR22Y32cdkZ2e-2XkAXCVU11OWszVVRVlQECgLxNBuBBnvi5qkKEAzFu_sB6oXKY_T22kL3taxMHWe0M86OSJyVIr8XtXv9XJjxHJq38rymsyxq7gbhKbDN-hYYh9FBu9YpjseOSObt20zmvDBM-q6uobwWrLwud5CFVtn1Q7cF4tFpSx_i5TBHmyPcba82ocWzbvQsdeV17qw4zcf3thseK88AMm6f-UQHDNzd7EqOWZB5ZAu8_JrsWB1sVKO-a6_c01lm4yWh3A5cEPbE3Dx-OekcTTZ7FM-gnZe5PQYOGJk6ozg4TSiKIlOdZIS0SCo2iAcE6VZD_p_z9P_b_ACOl7oD-PhQ_B0AruMgsxXQzJOoV2tPugZStyKnNek-gZmPIQN
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=BAW+resonators+with+antisymmetric+thick+electrodes&rft.inventor=Kim%2C+Dae+Ho&rft.inventor=Bi%2C+Zhiqiang&rft.inventor=Winters%2C+Mary&rft.date=2020-12-29&rft.externalDBID=B2&rft.externalDocID=US10879872B2