Devices including gate spacer with gap or void and methods of forming the same

• Main Authors: Leung, Ying-Keung, Tsai, Ching-Wei, Chiang, Kuo-Cheng, Liu, Chi-Wen
• Format: Patent
• Language: English
• Published: 15.12.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance with some embodiments, a structure includes a substrate, a gate stack over the substrate, a contact over the substrate, and a spacer disposed...