Replacement gate structures for advanced integrated circuit structure fabrication

• Main Authors: Auth, Christopher P, Ho, Byron, Jaloviar, Steven, Hattendorf, Michael L, Leib, Jeffrey S
• Format: Patent
• Language: English
• Published: 29.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a fin. An isolation str...